发明名称 SEMICONDUCTOR PROCESSING TECHNOLOGY INCLUDING MEASUREMENT OFRADIATED AND HEATED MAIN BODY BY PYROMETER AND EQUIPMENT FOREXECUTING TECHNOLOGY THEREOF
摘要 PROBLEM TO BE SOLVED: To eliminate restriction on the arrangement of probe by locating two probes on the boundary of a processing chamber such that a first probe includes no lamp and a second probe includes the field of view of first probe and a lamp. SOLUTION: A wafer 120 is set in a processing chamber 160 while being surrounded by a quartz envelope 130 and a lamp 140 is disposed on the side bank of envelope. Two probes are mounted on one side of the chamber 160 while facing the openings closely each other. More specifically, inlet face of a wafer probe 100 is directed toward the wafer 120 which is included in the field of viewΩ1 of an optical baffle 150 for limiting the field of view and the lamp 140 is excluded therefrom. A lamp probe 110 is arranged on a plane 170 and provided with a field of viewΩ2 including the entirety of wafer 120 in the field of viewΩ1 of probe 100 and the lamp 140 located on the side face of the field of viewΩ1 . This arrangement eliminates restriction on the arrangement of probe, e.g. arranging and removing of prove.
申请公布号 JPH08285692(A) 申请公布日期 1996.11.01
申请号 JP19960083885 申请日期 1996.04.05
申请人 A T & T I P M CORP 发明人 ANSONII TEE FUIORII
分类号 G01J5/08;G01J5/00;H01L21/22;H01L21/26;H01L21/324;(IPC1-7):G01J5/08 主分类号 G01J5/08
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