| 摘要 |
PURPOSE: To provide a cassette for a silicon substrate and an etching method for selectively etching a nonconductive etching residual generated in a semiconductor processing step. CONSTITUTION: In a step for removing a nonconductive residual caused in an etching step, part of a conductive silicon substrate is put in a positive level, by applying a voltage in an etching solution 17. A contact face between the chemical etching solution 17 and the silicon substrate with a part connected electrically to the silicon substrate is subjected to anode oxidation and covered with a passive-state film. Then, only the nonconductive etching residual is removed selectively in an isotropic etching step.
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