发明名称 Stainless steel member for semiconductor fabrication equipment and surface treatment method therefor
摘要 Stainless steel member for semiconductor fabrication equipment having a passive state coating on the surface of the stainless steel comprising, in weight percent, 0.1% or less of C, 2.0% or less of Si, 3.0% or less of Mn, 10% or more of Ni, 15 to 25% of Cr, 1.5 to 4.5% of Mo, 0.5% or less of one or more rare earth element and Fe for substantially the whole remainder. Said passive state coating has a pitting potential of at least 900 mV (when the current density of the anode polarization curve determined with a potentiostat in 3.5% aqueous sodium chloride solution is 10 mu A/cm2) and has a thickness of 0.5 to 20 nm. The invention also includes a surface treatment method for the stainless steel.
申请公布号 US5569334(A) 申请公布日期 1996.10.29
申请号 US19930162479 申请日期 1993.12.07
申请人 HITACHI METALS, LTD. 发明人 KAWATA, TSUNEHIRO;KOJO, KATSUHIKO;KAZAMA, YOUICHIRO;FUKAYA, TAKAYUKI;TSUJIMURA, TOSHIHIKO
分类号 C23C8/10;(IPC1-7):C23C8/10 主分类号 C23C8/10
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