METHOD FOR MANUFACTURING OF PHOTOELECTRIC TRANSDUCER

摘要

FIELD: instruments. SUBSTANCE: back side of silicon plate of p-conductivity has back contact. Its front side has thin layer of silicon dioxide which contains inversion comb using metal with low work function of electrons by means of induction of inverse layer in p-type silicon plate. Comb which absorbs current is located between strips of inversion comb. External bias is applied to inversion comb in order to decrease specific resistance of inversion layer. EFFECT: increased functional capabilities.