ENHANCED QUANTUM WELL INFRARED PHOTODETECTOR

摘要

An infrared detector array includes a plurality of detector pixel structures (154-164) each of which comprises a plurality of elongate quantum well infrared radiation absorbing photoconductor (QWIP) elements. The group of QWIP elements are spaced such that they comprise a diffraction grating (190) for the received infrared radiation. Top (186) and bottom (196) longitudinal contacts are provided on opposite surfaces of the QWIP elongate elements to provide current flow transverse to the axis of the element to provide the required bias voltage. An infrared radiation reflector (196) is provided to form an optical cavity for receiving infrared radiation. A plurality of detector pixel structures (154-164) are combined to form a focal plane array. Each detector pixel structure (154-164) produces a signal that is transmitted through a conductive bump (166-172) to a terminal of a read out integrated circuit (180). The group of the signals from the detector pixel structures produces an image corresponding to the received infrared radiation.