| 摘要 |
A process for producing a substrate crystal whereby nondeformed spherical crystals having an excellent crystal structure can readily be formed on a crystal base material, or a process for producing a substrate crystal whereby nondeformed spherical crystals freed from impurities can readily be formed on a crystal base material. The process comprises forming protrusions integrally on a semiconductor crystal base material, forming a flow control film covering the surface of the base material and the entire outside of the bottom side of each protrusion, irradiating the tip of each protrusion with heated beams to melt the tip, and solidifying the melt in a spherical shape by the surface tension of the melt itself and the flow control action of the film. <IMAGE> |
