ION IMPLANTING METHOD

摘要

depositing a Co metal in order that a silicon substrate may obtain some resistance in a vacuum evaporator; implanting diffusion ion by controlling the ion implantation energy in order that the projected range(Rp) of the Co metal may be in the metal thin film; a first rapid thermal processing to form a silicide and a junction at a temperature of 700 deg.C for 30 sec in the atmosphere of nitrogen; and removing the impurities not reacted in the junction after the first thermal processing.