发明名称 |
Semiconductor memory device |
摘要 |
A semiconductor memory device includes: an insulated gate transistor having a plurality of main electrode regions provided along a major surface of a substrate and a channel region provided between the plurality of main electrode regions, and a gate electrode provided on the channel region with a gate insulator therebetween, the gate electrode having at least two opposing portions; and an electrically breakable memory element provided on one of the main electrode regions.
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申请公布号 |
US5567962(A) |
申请公布日期 |
1996.10.22 |
申请号 |
US19940263147 |
申请日期 |
1994.06.21 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
MIYAWAKI, MAMORU;ISHIZAKI, AKIRA;MOMMA, GENZO;YUZURIHARA, HIROSHI;KOHCHI, TETSUNOBU |
分类号 |
H01L21/336;H01L21/8234;H01L27/102;H01L27/108;H01L27/115;H01L29/423;H01L29/786;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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