Process for cleaning semiconductor devices

摘要

The present invention provides a process for cleaning semiconductor devices which enables the contamination of copper to maintained under a level of about 109 atoms/cm2 to meet the qualification of DRAMs of equal to or greater than 64M bits in capacity by means of supplying O3 to a solution, resulting in great reproducibility and reliability. According to the present invention, a mechanism for removing a copper impurity in a semiconductor device uses oxygen to form a cupric oxide, which forms a cupric fluoride, which is then removed from the solution.