| 摘要 |
A precision resistor, on a semiconductor substrate, formed by using two polysilicon stripes to mask the oxide etch (and ion implantation) which forms a third conductive stripe in a moat (active) area of the substrate. The sheet resistance Rp and a patterned width Wp of the polysilicon stripes and the patterned width WM and sheet resistance RM, are related as RpWp=2RMWM. By connecting the three stripes in parallel, a net resistance value is achieved which is independent of linewidth variation.
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