发明名称 Laser ablation forward metal deposition with electrostatic assisted bonding
摘要 Apparatus and method for metal line deposition on a substrate. Laser ablation of a metal film coated on a first substrate removes metal ions from the film. The ions travel forward to a surface of a second substrate disposed opposite the metal film on the first substrate and are deposited on the second substrate. A positive electrode on the first substrate, a negative electrode on the second substrate, and a power supply create an electric field that is simultaneously applied across the first and second substrates to bond the metal ions to the second substrate. Bonding is enhanced by repeated reflecting a laser beam through the second substrate to heat the second substrate. The laser beam is reflected between a reflector and the deposited metal line.
申请公布号 US5567336(A) 申请公布日期 1996.10.22
申请号 US19950414930 申请日期 1995.03.31
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 TATAH, ABDELKRIM
分类号 C23C14/04;C23C14/28;H05K3/14;(IPC1-7):B23K26/00 主分类号 C23C14/04
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