| 摘要 |
PURPOSE: To increase more the in-plane evenness of a polishing rate to polish a wafer regardless of the state of the surface of the wafer, the film quality of the wafer and a wafer polishing condition. CONSTITUTION: A plate 1, which holes a wafer 15 and presses the wafer to a polishing cloth, is formed into a material of the same degree as a degree that the meterial for the surface to be polished of the wafer 15 is polished and a wafer pressing surface 2a of the plate 1 is previously polished on the same condtion as the wafer polishing condition, is formed into a mutual lapping surface and is formed into a pressing surface 2b. After that, while the wafer 15 is pressed to the polishing cloth 3 by the pressing surface 2b having a mutual lapping face, the wafer 15 is polished. |
