| 摘要 |
PURPOSE: To concentrate a current to an active layer by forming a stripe-like positive electrode in contact with a surface of a p-type layer etched to a stripe in almost the same width as a width of the stripe. CONSTITUTION: After a mask is formed to a specified shape on the surface of a p-type contact layer 7, a nitride semiconductor layer is etched in a 10μm- wide stripe by using RIE. After etching, a negative electrode 12 consisting of Ti/Al is formed to a 20μm-wide stripe in an exposed n-type contact layer 3 and a positive electrode 12 consisting of Ni/Au is formed all over the stripe- like P-type contact layer 7. The positive electrode 12 having almost the same width as a stripe width of the p-type contact layer 7 etched to a stripe is formed in a direct contact with the p-type contact layer 7. Thereby, a current is prevented from spreading, so that a current is concentrated to an active layer 5 directly. |
