| 摘要 |
PURPOSE: To provide a semiconductor device which operates at a high speed taking advantage of hot electron, is free from a collector reflection which occurs at a collector barrier in a device such as an HET, simple in structure, provided with electrodes which are easily formed, and operates on the basis of a new principle of operation. CONSTITUTION: An InGaAs quantum well layer 2 and an AlAs barrier layer 3 are formed on an N-GaAs source layer 1, and an N-GaAs drain layer 4 and a P-GaAs gate layer 5 adjacent to the layer 4 are formed on the barrier layer 3. When the drain layer 4 is biased positive toward the source layer 1, a tunnel current is made to flow through the intermediary of the barrier layer 3. When a voltage is applied to the gate layer 5 to make a PN junction reversely biased, a channel is increased in potential on a gate side and a tunnel current is reduced, so that a drain current can be controlled by a voltage applied onto the gate layer 5. Electrons inside the quantum well layer 2 are at an energy level that they are scattered, so that hot electrons on the same energy level can be obtained. |
