发明名称 PLASMA TREATMENT METHOD
摘要 <p>PURPOSE: To perform plasma treatment without adverse influence to the characteristics of the treatment. CONSTITUTION: After a sample brought into a vacuum treatment chamber is electrostatically attracted, plasma is generated. Then only an electrostatic attracting circuit is used through the plasma to attract the sample and plasma treatment is performed on the sample by applying a high-frequency bias to a sample stage so that the ions in the plasma can evenly act on the sample.</p>
申请公布号 JPH08274152(A) 申请公布日期 1996.10.18
申请号 JP19960060545 申请日期 1996.03.18
申请人 HITACHI LTD 发明人 ITO YOICHI;TSUBONE TSUNEHIKO
分类号 H05H1/46;C23C16/50;C23C16/511;C23F4/00;H01L21/302;H01L21/3065;H01L21/68;H01L21/683;(IPC1-7):H01L21/68;H01L21/306 主分类号 H05H1/46
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