发明名称 |
Silver selenide film stoichiometry and morphology control in sputter deposition |
摘要 |
A method of sputter depositing silver selenide and controlling the stoichiometry and nodular defect formations of a sputter deposited silver-selenide film. The method includes depositing silver-selenide using a sputter deposition process at a pressure of about 0.3 mTorr to about 10 mTorr. In accordance with one aspect of the invention, an RF sputter deposition process may be used preferably at pressures of about 2 mTorr to about 3 mTorr. In accordance with another aspect of the invention, a pulse DC sputter deposition process may be used preferably at pressures of about 4 mTorr to about 5 mTorr.
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申请公布号 |
US2004040835(A1) |
申请公布日期 |
2004.03.04 |
申请号 |
US20020230279 |
申请日期 |
2002.08.29 |
申请人 |
LI JIUTAO;HAMPTON KEITH;MCTEER ALLEN |
发明人 |
LI JIUTAO;HAMPTON KEITH;MCTEER ALLEN |
分类号 |
C23C14/00;C23C14/06;C23C14/34;C23C14/54;C30B23/02;G11C11/34;(IPC1-7):C23C14/32;B32B19/00 |
主分类号 |
C23C14/00 |
代理机构 |
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