| 摘要 |
PURPOSE: To generate a photocurrent of a rapid rise in a region added with iron and to form a P-N junction on the periphery of the region added with iron into a junction, in which a leakage current is little, by a method wherein iron is added to an N-type gallium arsenide deposited layer on a semi-insulative gallium arsenide substrate by thermal diffusion or ion-implantation. CONSTITUTION: When iron is added to an N-type gallium arsenide deposited layer 3 on a semi-insulative gallium arsenide substrate 1 by a thermal diffusion or an ion-implantation, a P-N junction is formed between a region 4 added with the iron and an N-type region on the periphery of the region 4. As an acceptor level of iron is off the center of a band gap in the region 4, the acceptor level becomes the recombination center of carriers in a P-type region, but does not become the center of the generation of the carriers. That is, the region 4 contributes to shortening the life of the carriers in the P-type region, but does not contribute to a generation current, which is one of leakage currents in the P-N junction. In such a way, a photocurrent of a rapid rise is generated in the region 4 and the P-N junction on the periphery of the region 4 is formed into a junction, in which a leakage current is little. |
