| 摘要 |
A method of manufacturing a semiconductor device with a semiconductor body (1) provided with a field insulation region (2) which adjoins a surface (3) of the semiconductor body (1) and which encloses an active monocrystalline semiconductor region (4, 5). The field insulation region (2) is provided with a strip of conductive material (6, 7, 8) which adjoins the surface (3), which is recessed in the field insulation region (2), and which makes contact with the active region (4, 5). The field insulation region (2) is first provided in the semiconductor body (1), after which a groove (13, 14, 15) is formed adjoining the active region (4, 5) in the field insulation region (2), in which groove subsequently the strip (6, 7, 8) of conductive material is provided. Semiconductor elements (20, 21) may be formed in the active semiconductor region (4, 5) and connected via the strips (6, 7, 8) recessed in the field insulation region (2). The relevant connection conductors lie outside the active regions (4, 5), which may accordingly be small. In addition, parasitic capacitances between the connection conductors and the semiconductor body are small. |
