| 摘要 |
In a bipolar silicon-on-insulator transistor comprising a substrate having a major surface, an oxide layer on said major surface, a silicon layer of a first conductivity type on said oxide layer, a base region of a second conductivity type extending into said silicon layer, an emitter region of said first conductivity type extending into said base region, and a collector region of said first conductivity type extending into said silicon layer at a lateral distance from said base region, a plug region of said second conductivity type extends into said silicon layer up to said oxide layer on the opposite side of said emitter region relative to said collector region, a portion of said plug region extends laterally along the surface of said oxide layer under at least part of the emitter region towards the collector region at a distance from said base region, and said plug region is electrically connected to said base region.
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