A METHOD FOR INTRODUCTION OF AN IMPURITY DOPANT IN SiC, A SEMICONDUCTOR DEVICE FORMED BY THE METHOD AND A USE OF A HIGHLY DOPED AMORPHOUS LAYER AS A SOURCE FOR DOPANT DIFFUSION INTO SiC

摘要

A method for introduction of an impurity dopant into a semiconductor layer (2) of SiC comprises a step (a) of ion implantation of said dopant in said semiconductor layer at a low temperature. The ion implantation is carried out in such a way that a doped and amorphous near surface layer (6) is formed, and the implantation step is followed by a step of annealing said semiconductor layer at such a high temperature that said dopant diffuses into the non-implanted sub-layer (3) of said semiconductor layer following said near surface layer.