Halbleiterspeichergeräte mit Spaltenredundanz

摘要

A semiconductor memory device for storing video data comprises a memory cell array (1) including a plurality of memory cells arrayed in a matrix, a register (3, 4) including a plurality of serially connected flip-flops for shifting data therein, said register (3, 4) being capable of inputting or outputting data in parallel from or to the memory cell array (1) and being also capable of outputting or inputting data in series to or from the outside of the device, a column redundant section (5) for storing data in lieu of a defective column of the memory cell array (1), a redundant latch section (6, 7) associated with the column redundant section (5) for holding the data from said register (3, 4) transiently, and a control RAM (8) for storing erroneous bit data of the defective column and for generating a control signal to control the register (3, 4), wherein the data in the register (3, 4) are transferred in idle at the flip-flop relevant to the defective column by the control signal supplied from the control RAM (8).