| 摘要 |
PURPOSE:To form a good and uniform refractory metal silicide film by a method wherein a metal on which a refractory metal silicide formed on gate polysilicon has been deposited by evaporation is transformed into a metal silicide during a heating operation. CONSTITUTION:First polysilicon is formed on an insulating substrate 10 by decomposing SiH4; it is patterned to form a polysilicon active layer 11. Then, a gate oxide film 12 is formed by thermal oxidation; second polysilicon 13 for gate electrode use is formed in the same manner as the first polysilicon. The gate oxide film 12 and the second polysilicon are patterned; then, a film of at least one metal 14 to be selected from Al, Pt, Mo, Ta, W, Ti, Ni, Cr and Au is formed on a whole face by using a vacuum evaporation method or the like. Then, the metal 14 is patterned. During this process, it is necessary that a width of the metal 14 is patterned so as to become narrower than a width of the second polysilicon gate. After that, a source and a drain are formed; an interlayer insulating film is formed; an opening is made in this film; after that, a metal wiring part is formed. |
