| 摘要 |
The method of manufacturing field oxide comprises the steps of : forming a trench(20) by etching a first nitride film(4), a polysilicone film(3), a first oxide film(2) and a semiconductor substrate(1) of a field region using an isolation mask; forming a second oxide film(5) by dry oxidizing the semiconductor substrate of the exposed trench and the side wall of the polysilicone film(3); forming a second nitride film spacer(6') by etching a second nitride film(6) anisotropically; forming a field oxide(7) by thermal oxidation of the exposed semiconductor substrate; and removing the second nitride film spacer(6'), the first nitride film(4), the second nitride film(6) and the polysilicone film(3).
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