发明名称 ABRADANT FOR SILICON DIOXIDE FILM AND ABRASIVE METHOD THEREOF AND MANUFACTURE OF LAMINATED SEMICONDUCTOR SUBSTRATE
摘要 PURPOSE: To secure a silicon dioxide film as having desirable surface roughness by using those of abrasive grains made up of mixing colloidal silica to a KOH or NH3 dispersant. CONSTITUTION: As for an abradant, fumed silica is eliminated from each conditioner of SC112 or ILD1200, and then it is made up of putting colloidal silica into this conditioner. This colloidal silica uses such manufactured by a wet colloidal process. The colloidal silica in this case is a complete sphere and the diameter 10nm to 100nm. Its abrasion is carried out by means of two-stage abrasives. In brief, first of all, an abrasive of colloidal silica of 50 to 100nm in means abrasive size is used, thereby performing a flettening abrasion onto the surface of a silicon dioxide film 12 covering a silicone wafer 11. With this first stage abrasion, an abrasive rate is made somewhat highish and removal of a level difference is carried out in this way. Subsequently, with this colloidal silica abradant of 10 to 30nm in mean abrasive size, the silicon dioxide film 12 being large in the level difference is polished for finishing into flatness.
申请公布号 JPH08267356(A) 申请公布日期 1996.10.15
申请号 JP19950104734 申请日期 1995.04.04
申请人 MITSUBISHI MATERIALS SHILICON CORP;MITSUBISHI MATERIALS CORP 发明人 MORITA ETSURO;SAKAI SHINSUKE;KAWAI YUKIO
分类号 B24B37/00;B82Y99/00;C09K3/14;H01L21/02;H01L27/12 主分类号 B24B37/00
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