SEMICONDUCTOR ELECTRODE FORMING METHOD AND APPARATUS

摘要

PURPOSE: To form an electrode having excellent electrical characteristics on an oxide semiconductor. CONSTITUTION: After high purity ozone of a flowing rate density of 10<15> to 10<17> cm<-2> s<-1> is introduced into a vacuum tank 6 of an electrode material deposition apparatus 1 from a reactive oxidation gas supplying apparatus 8 to cool an oxide semiconductor S while irradiation of ozone up to the temperature not allowing isolation of oxygen, the vacuum tank 6 is quickly evacuated up to a high vacuum condition of 10<-6> Torr. Thereby, an electrode material is deposited on the surface of an oxide semiconductor S with an electron gun type electrode material depositing part 4 or a low resistance type electrode material depositing part 5.