| 摘要 |
PURPOSE: To simplify the production process and improve the degree of integrity by eliminating the need of an interconnection layer for cross coupled interconnections. CONSTITUTION: A pair of opposed protrudent semiconductor regions 23 and 24 are formed through a thin gate insulation film 9 on a one-conductivity type semiconductor substrate 1. Base regions 13 and 19 are formed between source regions 11 and 12 and drain regions 15 and 17 of a field-effect transistor on one semiconductor region 23 and base regions 14 and 20 are formed between source regions 12 and 22 and drain regions 16 and 18 of a field-effect transistor on the other semiconductor region 24 so that the base regions mutually cross and the region 11 and 21 of one field effect transistor are used for the gate electrodes of the other transistor opposed to the one transistor. |
