The sensor detects light in three different wavelength regions and includes two diode components in optical series. The diodes are made of amorphous silicon and include a p-i-n or n-i-p diode together with a pile diode consisting of two series connected partial diodes. The whole diode arrangement has a pinip or nipin construction. The diode components are connected via electrode layers through which independent potentials are applied. The photocurrents generated in the diodes are measured and can be applied to three different spectral regions.
申请公布号
DE19512493(A1)
申请公布日期
1996.10.10
申请号
DE19951012493
申请日期
1995.04.04
申请人
SIEMENS AG, 80333 MUENCHEN, DE
发明人
KUSIAN, WILHELM, DR.-ING.-HABIL., 81929 MUENCHEN, DE;JUERGENS, WILFRIED, DIPL.-PHYS., 81245 MUENCHEN, DE;TOPIC, MARKO, DIPL.-ING., LJUBLJANA, SI;SMOLE, FRANC, DR.-ING.-HABIL., LJUBLJANA, SI
