| 摘要 |
FIELD: photographic processes. SUBSTANCE: photoresist material containing 1,2-naphtoquinodiazide- (2), 5-sulphonic acid diester of 2,4-dihydroxybenzophenone, cresol-formaldehyde novolac resin, and organic solvent is supplemented with an electronodonor organic compound selected from the group containing p-dimethylaminobenzaldehyde, p-phenylenediamine, p-diethylaminobenzaldehyde, nitrosodiethylaniline, o-phenylenediamine, and ferrocene, concentrations of components in the composition being the following (in wt %): novolac resin, 60-66.5; diester, 30-33; amine compound, 2-9; organic solvent, the balance. Combining high sensitivity to near UV radiation with high degree of contrast and resistance in acid media, including ion bombardment conditions, photoresist is applicable to projection photolithography processes using ion-plasma etching. EFFECT: increased sensitivity and contrast coefficient of resist. |
