HIGH SPEED BIPOLAR TRANSISTOR & MANUFACTURING METHOD THEREOF

摘要

forming a trench for isolation after forming a n+ silicone layer(1) and a n- silicone layer(2) on a P type silicone wafer and a first nitrided film; forming a local insulating film(3) by thermal oxidizing an inactive region locally except an active region(4a) and a collector junction region(4b); forming a n+ layer(4) by ion-implantation into the collector junction region(4b); defining an emitter region by etching after forming a base thin film(5) and a silicide thin film(6) for a base electrode and depositing a first, a second insulating film(7,8); forming a first side wall insulating film(9); removing the second insulating film(8), the first side wall insulating film(9) and the remained base thin film(5); forming a second side wall insulating film(11) by anisotropic dry-etching after forming a fourth insulatin film; forming an emitter polysilicone layer(12a) and a collector polysilicone layer(12b) by etching a polysilicone layer(12) selectively, and depositing a fifth insulating film(13).