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发明名称
Feldeffekthalbleiteranordnung mit Schottky-Gate
摘要
申请公布号
DE68926227(T2)
申请公布日期
1996.10.02
申请号
DE19896026227T
申请日期
1989.12.06
申请人
KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP
发明人
SHIMADA, KIZASHI INTELLECTUAL PROPERTY DIVISION, TOKYO 105, JP;AKIYAMA, TATSUO INTELLECTUAL PROPERTY DIVISION, TOKYO 105, JP;KOSHINO, YUTAKA INTELLECTUAL PROPERTY DIVISION, TOKYO 105, JP
分类号
H01L21/338;H01L21/28;H01L29/417;H01L29/43;H01L29/47;H01L29/812;(IPC1-7):H01L29/47
主分类号
H01L21/338
代理机构
代理人
主权项
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