Vertical silicon carbide MOSFET

摘要

The MOSFET includes a silicon carbide substrate (11), a drift layer (12), and a channel region (14). Between the drift layer and the channel region is a breakthrough amplification layer (20). A gate insulator (17) is formed on the sides of the channel region. The substrate, the drift layer, the amplification layer, and the channel region are all of the same conductivity but have different dopant concns.. The drift layer has a lower dopant concn. than the substrate but a higher concn. than either the amplification layer or the channel region. The gate insulator layer acts as an interface to the amplification layer and has gate material which displays a depletion region to provide a barrier region to prevent current flowing through the channel region.