Verfahren zum Analysieren von Defekten in einer Halbleitervorrichtung

摘要

In order to verify whether defects occurring during a manufacturing process result in the electrical failures during the operation of a device, and to verify during which part of a process the defects which cause electric failures are generated, there is provided a method for analyzing defects in a semiconductor device which includes the steps of measuring the position of physical defects generated during a process step, converting the positions of the physical defects into logic row/column address data, and comparing the logic row/column address data converted from the positions of the physical defects with electric failure data which are measured after the manufacturing processes have been completed.