| 摘要 |
PROBLEM TO BE SOLVED: To characterize the design of a patterned layer by applying light to an arrangement by light with a specific wavelength, providing an appropriate wavelength for measuring the design of the patterned layer, measuring a reflected light close to zero from the arrangement, and indicating it as the measurement value of a reflection factor. SOLUTION: A patterned material such as a patterned film 2 is subjected to light 9 with a proper wavelength. Especially, the incident light 9 contains a wavelength in a range where the patterned film 2 absorbs more light as compared with a substrate 7 and the substrate 7 reflects more light as compared with the patterned film 2. Furthermore, the wavelength resolves the micro-size design of a pattern, for example, with a line width of W. The intensity of reflected light 11 close to zero from the patterned film 2 and the substrate 7 is measured and a reflection spectrum indicates the intensity of the reflected light 11 by a function of the wavelength of the reflected light 11. |
