发明名称 Control device of semiconductor power device
摘要 A control device for controlling a double gate semiconductor device having a second gate electrode for controlling transition from a thyristor operation to a transistor operation, and a first gate electrode for controlling transition from transistor operation to an ON/OFF operation, and for controlling a current passing from a collector electrode to an emitter electrode, includes a first gate control circuit for delaying a turn-off signal to the double gate semiconductor device and applying the turn-off signal to the first gate electrode.
申请公布号 US5561393(A) 申请公布日期 1996.10.01
申请号 US19940330126 申请日期 1994.10.27
申请人 FUJI ELECTRIC CO., LTD. 发明人 SAKURAI, KEN'YA;OTSUKI, MASAHITO;TERASAWA, NORIHO;MIYASAKA, TADASHI;NISHIURA, AKIRA;NISHIURA, MASAHARU
分类号 H01L29/739;H01L29/745;H01L29/749;H03K17/0812;H03K17/082;H03K17/567;(IPC1-7):H01L29/74;H03K17/72 主分类号 H01L29/739
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