| 摘要 |
<p>PURPOSE: To reduce control voltage by imparting bias voltage to the channel formation zone of a cell, and shifting the characteristic of source drain current versus gate source voltage toward a low voltage level over such an extent as corresponding to threshold voltage in the case of switching an emitted electron beam, or controlling the modulation thereof. CONSTITUTION: Field emission cathode devices ED to form cells are arrayed to a matrix structure, and control electrodes C1 and C2 are led out from the gate G and channel formation zone 101 of each cell. Also, the electrodes C1 and C2 are respectively connected to signal electrodes X1 and Y1 , and an emitter 11 is provided for a drain D, thereby providing the structure where an emitter gate 12 is connected to a common electrode XEC. At the time of driving the devices ED, signal voltage -Vt is imparted to a selected electrode Y1 , while 0V is imparted to a non-selected electrode. In addition, voltage Vd corresponding to the cells is imparted to the electrode Xi synchronously with the imparting of the voltage of -Vt . In this case, bias voltage -V is imparted to the zone 101 to shift the characteristic of source drain current ISD versus gate source voltage VGS to a low voltage level, thereby enabling control voltage to be reduced.</p> |
