| 摘要 |
PURPOSE: To prevent peeling of a closely made fine resist pattern or a resist pattern having high aspect ratio and to reduce the pattern formation failure by forming an organic film on a substrate to be processed before coating with the resist, and then irradiating the film with an ultraviolet ray or a far infrared ray. CONSTITUTION: An organic thin film 5 is formed on a substrate to be processed in which an oxide film 2, an Al film 3 and a p-type TEOS film 4 are formed on Si 1. The film 5 is irradiated with an ultraviolet ray 6. The film 5 is coated with resist 7, exposed 9 via a mask 8 to form a resist pattern 7a. With the pattern 7a as a mask the substrate is etched, and a P-type TEOS pattern 4a and the pattern 5a having the same size as the pattern 7a are obtained. Thus, the peeling of a closely made fine resist pattern and the resist pattern having high aspect ratio can be prevented, thereby reducing the pattern formation failure. |
