| 摘要 |
A photosensitive material comprising a photosensitive-group-containing fullerene such as a photosensitive material which is obtained by adding a photosensitive group to fullerene and/or a photosensitive material which is obtained by combining the fullerene with a photosensitive agent is provided. The photosensitive material according to the present invention has excellent properties as a new resist which is a photosensitive material suitable as a photolithographic resist for the production of semiconductors utilizing such light source as ultraviolet light, deep ultraviolet light, X-ray or electron beam and which meets the requirements for realization of a higher level of resolution and sensitivity.
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