发明名称 Protection circuit for semiconductor devices
摘要 A protection circuit (1) for input comprises two transistors (11, 12) connected in series between a first voltage supply (Vcc) and a second voltage supply (GND), and an intermediate junction point is used as an input terminal and an output terminal. When a surge voltage is applied to the input terminal, since terminals (51, 53) of the two transistors (11, 12) are connected to predetermined junction points in such a way that the transistors can operate as bipolar transistors or cause punch through phenomenon (without causing breakdown operation of a low response speed to surge voltage), the surge voltage can be absorbed at high speed, thus increasing anti-ESD (electro static discharge) rate. Further, a protection circuit for power supply comprises two transistors (31, 32) connected in parallel to each other between a first voltage supply (Vcc) and a second voltage supply (GND). Similarly, the terminals (65, 68) of the two transistors are connected to predetermined junction points in such a way that when a surge voltage is superimposed upon the supply voltage, at least one of the transistors can operate as a bipolar transistor, without causing breakdown operation. <IMAGE>
申请公布号 EP0735640(A1) 申请公布日期 1996.10.02
申请号 EP19960105235 申请日期 1996.04.01
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 KINUGASA, MASANORI;FUJIWARA, RYUJI
分类号 H01L29/78;H01L21/8234;H01L23/58;H01L27/02;H01L27/088 主分类号 H01L29/78
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