| 摘要 |
PURPOSE: To reduce steps formed on the surface of a silicon substrate by CF4 plasma etching by removing a sacrificial oxide film at the time of removing a damaged layer formed on the surface of the substrate during the course of CF4 etching by sacrifice oxidation. CONSTITUTION: A sacrifice oxide film 6 having a thickness of 50-100Åis formed on the surface of a silicon substrate damaged during CF4 plasma etching and removed by wet etching. Therefore, the deterioration of the dielectric strength of the substrate 1 can be reduced, because a damaged layer formed on the surface of the substrate 1 can be sufficiently removed and, at the same time, steps formed on the surface of the substrate 1 are reduced when the layer 6 is removed.
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