| 摘要 |
<p>PURPOSE: To obtain a liquid crystal display device equipped with TFTs having excellent operating characteristics which enables a high-precision image display. CONSTITUTION: A polycrystalline silicon film as a base layer 104 for a gate electrode and gate wirings is formed by reduced pressure CVD method to 150nm (preferably 100-200nm) thickness. An impurity such as phosphorus is added to the film and then the film is subjected to heat treatment for activation to have low resistance. A metal silicate film such as tungsten silicate as an upper layer 105 is formed to 250nm thickness by sputtering in argon gas. Then the TFT array substrate having TFTs in a array state is exposed in a hydrogen plasma atmosphere at 270 deg.C for one hour to effectively passivate with hydrogen the crystalline silicon in the activated layer 102. Thus, excellent operating characteristics as TFTs can be obtd.</p> |
