| 摘要 |
PROBLEM TO BE SOLVED: To reduce a manufacturing time regarding the formation and elimination of an adhesion layer, when forming a conductive plug in a semiconductor device. SOLUTION: A conductive plug 46 is formed by using an aluminum nitride adhesive layer 42 for a semiconductor device 30. The adhesive layer is deposited on an interlayer dielectric 40 before forming a contact opening 44, thus preventing the adhesive layer from being formed along the sidewall or the bottom part of an opening. Tungsten or other plug materials are deposited in an opening, and on an adhesive layer and are successively polished or etched and returned, thus forming a plug. The remaining part of the adhesive layer may remain in a device or may be eliminated according to the situation. |
