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发明名称
Silicid-Übereinstimmendes CMOS-Verfahren mit einer differenzierten Oxid-Implantierungsmaske
摘要
申请公布号
DE69028159(D1)
申请公布日期
1996.09.26
申请号
DE19906028159
申请日期
1990.06.19
申请人
NATIONAL SEMICONDUCTOR CORP., SANTA CLARA, CALIF., US
发明人
LIOU, TIAN-I, CUPERTINO, CA, US;TENG, CHIH-SIEH, SAN JOSE, CA, US
分类号
H01L29/78;H01L21/265;H01L21/8238;H01L27/092;(IPC1-7):H01L21/82
主分类号
H01L29/78
代理机构
代理人
主权项
地址
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