Semiconductor platelet on support precise location method

摘要

The method involves high precision locating of a platelet having dimensions in mm and sub-mm region. The platelet is of the GaAs or Si material and contains a first top side structure for a microelectronic, electric, or micromechanical function. The platelet is provided with a second structuring of depressions and/or apertures and/or recesses. The support structure contains rising formations. The platelet is so deposited on the support that the latter rising formations are inserted into the platelet depressions. Pref. the platelet second structuring is adapted to the first one.