| 摘要 |
A method for fabricating bond pads on a semiconductor device that reduces intermetallic growth between a metallization layer and a bonding layer is discussed. Initially a metallization layer is deposited over a substrate. Following steps include depositing a barrier layer over the metallization layer, masking a portion of the barrier layer, and etching the barrier layer and the metallization layer. Etching of the barrier and masking layers is performed utilizing the barrier layer mask as a mask for both the barrier layer and the metallization layer. Further steps include depositing a non-conductive layer conformally overlying the barrier layer, masking a portion of the non-conductive layer, and etching the non-conductive layer. Etching the non-conductive layer forms an exposed region of the barrier layer. A later step of this method includes forming a bond layer over the exposed region of the barrier layer, with one possible formation method utilizing an electrolysis process. Thus a bond pad with a capped metallization layer is produced with only two mask and etch steps. This bond pad will withstand ambient temperatures up to approximately 200 DEG C.
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