Semiconductor device manufacturing method

摘要

The manufacturing method uses a substrate (1) on which a first wiring layer (3) is formed. It has a contact hole formed in the first wiring layer. A second wiring layer (7) is layered on the first wiring layer through a resin layer (5). The resin layer is made from silicon polymer of chemical formula (HO)2(R2Si2O3)NH2, where n represents an integer ranging from 2000-100000 and R represents either a hydrogen atom, a lower alkyl group or a phenyl group.