| 摘要 |
A method of manufacturing a ridge-buried semiconductor laser includes growing semiconductor layers including at least a first conductivity type lower cladding layer, an active layer, and a second conductivity type upper cladding layer on a semiconductor substrate; forming a striped-shaped impurity diffusion source film including atoms producing the second conductivity type when diffused into the upper cladding layer at a stripe-shaped region which becomes a top of a ridge; ridge-etching the semiconductor crystal layers using a ridge-etching mask including the impurity diffusion source film so that the second conductivity type upper cladding layer has a ridge shape; growing a first conductivity type current blocking layer to bury the ridge; and forming a high dopant impurity concentration region including a dopant impurity producing the second conductivity type impurity in the second conductivity type upper cladding layer of the ridge region by diffusing atoms from the stripe-shaped impurity diffusion source film by heat treatment. This method provides a semiconductor laser in which the element resistance is reduced, high-frequency superposition is possible at a practical level, and characteristics at the time of the high-frequency superposition are improved.
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