发明名称 |
PRODUCTION OF QUARTZ CRUCIBLE |
摘要 |
PURPOSE: To produce a quartz crucible for pulling up of a silicon crystal, giving a silicon wafer having long life time and capable of getting a silicon single crystal having suppressed laminar defects such as OSF. CONSTITUTION: A quartz crucible is produced by using natural quartz glass powder or synthetic quartz glass powder and the produced quartz crucible is heat-treated in hydrogen gas or a mixture of hydrogen gas and an inert gas under normal or positive pressure to include >=1×10<16> molecules/cm<3> of hydrogen molecules in the quartz crucible.
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申请公布号 |
JPH08239231(A) |
申请公布日期 |
1996.09.17 |
申请号 |
JP19950068575 |
申请日期 |
1995.03.02 |
申请人 |
SHIN ETSU CHEM CO LTD |
发明人 |
OTSUKA HISATOSHI;AOYAMA TAKESHI |
分类号 |
C30B15/10;C01B33/152;C03B20/00;C03B32/00;C03C3/06;(IPC1-7):C03B20/00 |
主分类号 |
C30B15/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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