| 摘要 |
PROBLEM TO BE SOLVED: To provide a high frequency metal-oxide-semiconductor(MOS) element circuit suitable for VLSI structure. SOLUTION: A CMOS coupled-tank oscillator having a VLSI circuit has two inverters 16 with their inputs and outputs connected through respective inductors (simple wires also are available) 20, 22, and capacitors (simple gate capacitors for inverters are also available) 24, 26 acting in parallel with respective inverters 16. In this configuration, a high frequency signal can be generated from the 0.9μCMOS oscillator.
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