| 摘要 |
PROBLEM TO BE SOLVED: To increase current capacity of a power semiconductor device by a method, wherein an anode is greater in diameter than a cathode and smaller in diameter than a semiconductor base. SOLUTION: A power semiconductor device has a semiconductor base 1, having inclined edge faces 8, 9, a cathode 2, an anode 3 and a junction formed without alloying at least between the anode 3 and semiconductor base 1. There is provided the anode 3 in which a diameter of a semiconductor device 1 is greater than a diameter of the cathode 2. However, for reasons of manufacturing technology, the anode 3 does not reach an edge of the semiconductor base 1 and ends under the inclined edge face 9. However, the anode 3 may reach under the inclined edge face 8. Thereby, it is possible to decisively improve the cooling of the semiconductor base 1. Therefore, the current capacity is increased. Electrodes 2, 3 having different sizes are provided by diffusion welding or press sintering. The bending stress of the semiconductor base 1 generated at that time can be reduced to a safe degree for the semiconductor base 1 by using an elastic filler 10, for example. |
