| 摘要 |
PROBLEM TO BE SOLVED: To provide a decreased base resistance value, and to obtain a small device region by diffusing an extrinsic base region from a diffusion source dielectric layer forming an emitter window, implanting an intrinsic base region from the emitter window, and forming an emitter electrode. SOLUTION: A collector region 102 is formed, and a diffusion source dielectric 118 is accumulated on the collector region 102. Then, the etching of an emitter window 1126 is carried out to the diffusion source dielectric layer 118, and an extrinsic base region 110 is diffused from the diffusion source dielectric layer 118 to a collector region 102. Next, an intrinsic base area 108 is implanted through the emitter window 116 to the collector region 102, and an emitter electrode 124 is formed in the emitter window 116, and an emitter region 126 is formed in the intrinsic base region 108. For example, the intrinsic base region 108 is implanted through a screen oxide film 130, an inter-base and emitter spacer 120 is formed, and then a polysilicon layer 132 is accumulated. |
